TC1606N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 1 / 2 2w high linearity and high efficiency gaas power fets features 2w typical power at 6 ghz photo enlargement linear power gain: g l = 8 db typical at 6 ghz high linearity: ip3 = 43 dbm typical at 6 ghz non-via holes source for self-bias application suitable for high reliability application breakdown voltage: bv dgo 18 v lg = 0.6 m, wg = 5 mm high power added efficiency: nominal pae of 43 % at 6 ghz tight vp ranges control high rf input power handling capability 100 % dc tested description the TC1606N is a gaas pseudomorphic high electron mobility transistor (phemt) gaas power fet, which has high linearity and high power added efficiency. the device is processed without via-holes for self-bias applications. the long gate length makes the device to have high breakdown voltage. all devices are 100% dc tested to assure consistent quality. bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. backside gold plating is compatible with standard ausn die-attach. typical application include commercial and military high performance power amplifier. electrical specifications (t a =25 c) symbol conditions min typ max unit p 1db output power at 1db gain compression point, f = 6 ghz v ds = 8 v, i ds = 500 ma 32.5 33 dbm g l linear power gain, f = 6 ghz v ds = 8 v, i ds = 500 ma 8 db ip3 intercept point of the 3 rd -order intermodulation, f = 6 ghz v ds = 8 v, i ds = 500 ma,*p scl = 20 dbm 43 dbm pae power added efficiency at 1db compression power, f = 6 ghz 43 db i dss saturated drain-source current at v ds = 2 v, v gs = 0 v 1.2 a g m transconductance at v ds = 2 v, v gs = 0 v 850 ms v p pinch-off voltage at v ds = 2 v, i d = 10 ma -1.7** vo l t s bv dgo drain-gate breakdown voltage at i dgo = 2.5 ma 18 22 vo l t s r th thermal resistance 8 c/w note: * p scl : output power of single carrier level. * *for the tight control of the pinch-off voltage . TC1606N?s are divided into 3 groups: (1) TC1606Np1519 : vp = -1.5v to -1.9v (2) TC1606Np1620 : vp = -1.6v to -2.0v (3) TC1606Np1721 : vp = -1.7v to -2.1v in addition, the customers may specify their requirements.
TC1606N rev4_20070502 transcom, inc., 90 dasoong 7 th road, tainan science-based industrial park, hsin-she shiang, tainan county, taiwan, r.o.c. web-site: www.transcominc.com.tw phone: 886-6-5050086 fax: 886-6-5051602 2 / 2 absolute maximum ratings (t a =25 c) symbol parameter rating v ds drain-source voltage 12.0 v v gs gate-source voltage -5.0 v i ds drain current i dss p in rf input power, cw 30 dbm p t continuous dissipation 7.7 w t ch channel temperature 175 c t stg storage temperature - 65 c to +175 c chip dimensions units: micrometers gate pad: 76.0 x 59.5 chip thickness: 50 drain pad: 86.0 x 76.0 chip handling die attachment: conductive epoxy or eutectic die attach is recommended. eutectic die attach can be accomplished with au-sn (80%au-20%sn) perform at stage temperature: 290 c 5 c; handling tool: tweezers; time: less than 1min. wire bonding: the recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. stage temperature: 220 c to 250 c; bond tip temperature: 150 c; bond force: 20 to 30 gms depending on size of wire and bond tip temperature. handling precautions: the user must operate in a clean, dry environment. care should be exercised during handling avoid damage to the devices. electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. the static discharge must be less than 300v. g g d d g g d d s s s s s 1060 ! 12 470 ! 12
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